Power Gan Devices: Materials, Applications and Reliability (Paperback)

Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

Power Gan Devices: Materials, Applications and Reliability (Paperback)

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商品描述

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption.

The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach.

 

 

This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

商品描述(中文翻譯)

本書首次全面介紹了基於氮化鎵的功率電晶體的特性和製造方法，並由該領域中最活躍的研究團隊做出貢獻。它描述了氮化鎵作為製造功率電晶體的優秀材料的優點，包括高能隙、高擊穿場強和飽和速度。這些特性使得這些器件能夠達到超過千伏的擊穿電壓和非常高的開關頻率，因此適用於功率轉換系統的應用。基於氮化鎵的開關模式功率轉換器已經展示了超過99％的效率，為氮化鎵晶體管在功率轉換市場的大規模應用鋪平了道路。這預計將在環境和經濟層面上帶來重要的優勢，因為功率轉換損失占全球電力消耗的10％。

本書的第一部分描述了氮化鎵相對於傳統半導體材料的特性和優勢。第二部分描述了器件製造的技術，以及氮化鎵在矽基上的大規模生產方法。特別關注的是三種最先進的器件結構：側向電晶體、垂直功率器件和基於納米線的HEMT。本書還涵蓋了其他相關主題，如通常關閉操作的策略以及與器件可靠性相關的問題。最後一章從系統層面探討了基於氮化鎵HEMT的開關特性。

本書對於從事材料、器件和功率電子領域的人員來說是一個獨特的參考資料，它提供了關於材料生長、器件製造、可靠性問題和電路級開關研究的跨學科信息。

作者簡介

Matteo Meneghini received the Ph.D. degree in the optimization of GaN-based LED and laser structures from the University of Padova, Italy. He is currently Assistant Professor at the Department of Information Engineering, University of Padova. During his career he has extensively worked on the reliability and parasitics of GaN-based semiconductor devices for application in the RF, power electronics and optoelectronics fields: his research is mainly focused towards the understanding of the physical mechanisms that limit the performance and the reliability of GaN-based LEDs, lasers, and HEMTs.

Gaudenzio Meneghesso received the Ph.D. degree in electrical and telecommunication engineering from the University of Padova, Padova, Italy, in 1997. In 1995, he was with the University of Twente, Enschede, The Netherlands, with a Human Capital and Mobility fellowship (within the SUSTAIN Network) working on the dynamic behavior of protection structures against electrostatic discharge (ESD). Since 2011, he has been a Full Professor with the Department of Information Engineering, University of Padova.
Enrico Zanoni was born in Verona, Italy, in 1956. He received the Laurea degree in physics (cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 1982, after a student internship with the S. Carlo Foundation, Modena. During 1985-1988, he was an Assistant Professor with the Faculty of Engineering, University of Bari, Bari, Italy. From 1988 to 1993, he frequently visited the U.S. and established research collaborations with Bell Laboratories; Hughes Research Laboratories; IBM T. J. Watson Research Center; Massachusetts Institute of Technology, Cambridge, MA, USA; TRW (currently, Northrop Grumman); University of California, Santa Barbara, CA, USA; and many other industrial and academic laboratories. During 1996-1997, he was a Full Professor of industrial electronics with the University of Modena and Reggio Emilia. He is currently with the University of Padova, Padua, Italy, where he was an Assistant Professor during 1988-1992, an Associate Professor of electronics during 1992-1993, a Full Professor of microelectronics during 1993-1996, and has been a Full Professor of digital electronics with the Department of Information Engineering since 1997.

 

作者簡介(中文翻譯)

Matteo Meneghini在意大利帕多瓦大學獲得了優化氮化鎵基LED和雷射結構的博士學位。他目前是帕多瓦大學資訊工程系的助理教授。在他的職業生涯中，他廣泛研究了氮化鎵基半導體器件在射頻、功率電子和光電子領域應用中的可靠性和寄生效應。他的研究主要集中在理解限制氮化鎵基LED、雷射和HEMT性能和可靠性的物理機制。

Gaudenzio Meneghesso在意大利帕多瓦大學獲得了電氣和通信工程的博士學位。1995年，他在荷蘭恩斯赫德的特溫特大學擔任人力資本和流動性獎學金（在SUSTAIN網絡內）的研究員，研究靜電放電（ESD）對保護結構的動態行為。自2011年以來，他一直是帕多瓦大學資訊工程系的教授。

Enrico Zanoni於1956年出生於意大利維羅納。他於1982年從摩德納和雷焦埃米利亞大學物理系（榮譽畢業）獲得學士學位，並在摩德納的S. Carlo基金會進行了學生實習。1985年至1988年期間，他在巴里大學工程學院擔任助理教授。從1988年到1993年，他經常訪問美國並與貝爾實驗室、休斯研究實驗室、IBM T. J.華生研究中心、麻省理工學院、TRW（現為Northrop Grumman）、加州大學聖塔芭芭拉分校等工業和學術實驗室建立了研究合作關係。1996年至1997年，他在摩德納和雷焦埃米利亞大學擔任工業電子的教授。他目前在帕多瓦大學任職，自1988年至1992年擔任助理教授，1992年至1993年擔任電子學副教授，1993年至1996年擔任微電子學教授，並自1997年起擔任資訊工程系的數字電子學教授。

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