High-Frequency Gan Electronic Devices
暫譯: 高頻氮化鎵電子裝置

Fay, Patrick, Jena, Debdeep, Maki, Paul

High-Frequency Gan Electronic Devices
  • 出版商: Springer
  • 出版日期: 2019-08-24
  • 售價: $7,030
  • 貴賓價: 9.5 折 $6,679
  • 語言: 英文
  • 頁數: 309
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 3030202070
  • ISBN-13: 9783030202071
  • 相關分類: GAN 生成對抗網絡

    • 海外代購書籍(需單獨結帳)

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商品描述

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.

  • Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;
  • Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;
  • Provides "vertically integrated" coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;
  • Includes fundamental physics, as well as numerical simulations and experimental realizations.


商品描述(中文翻譯)

這本書匯集了科學家和裝置工程師的最新研究，涵蓋了在 III-N 材料系統中，既有積極縮放的傳統晶體管，也有非常規的高頻裝置概念。書中詳細討論了基於深度縮放的 HEMT 的毫米波到太赫茲操作的裝置概念，以及基於極化誘導的 2DEG 通道中的等離子波傳播、隧道效應和熱載流子注入的分佈式裝置設計。此外，還包括了支持這些演示的基礎材料科學的進展，以及允許準確表徵和評估這些新興裝置概念的計量學進展。本書針對希望在基於 GaN 的電子裝置研究中突破界限的讀者，提供了當前全面的裝置概念和物理現象的處理，適合將 GaN 及相關材料應用於新興的超高頻應用。

- 提供讀者對於傳統（即 HEMT）縮放以及適合於毫米波和太赫茲範圍內放大和信號生成的非常規裝置架構的綜合處理，作者為該領域活躍且廣為人知的專家；
- 討論了傳統的深度毫米波縮放 HEMT 以及針對毫米波和太赫茲範圍的非常規方法；
- 提供「垂直整合」的內容，包括促成這些最新進展的材料科學，以及裝置物理與設計和計量技術；
- 包括基本物理、數值模擬和實驗實現。

作者簡介

Patrick Fay received a Ph.D. in electrical engineering from the University of Illinois at Urbana-Champaign in 1996 after receiving a B.S. in electrical engineering from Notre Dame in 1991. Dr. Fay served as a visiting assistant professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign in 1996 and 1997, and joined the faculty at the University of Notre Dame in 1997. Dr. Fay's research interests include the design, fabrication, and characterization of microwave, millimeter-wave, and terahertz electronic devices and circuits, as well as devices for high-power applications. His research also includes the development and use of micromachining techniques for the fabrication of microwave through sub-millimeter-wave components and packaging. At Notre Dame, he was awarded the Department of Electrical Engineering's Outstanding Teacher Award in 1998-1999 and 2018, and the College of Engineering's Outstanding Teacher award in 2015. Prof. Fay is a Fellow of the IEEE, and has published 9 book chapters and more than 300 articles in refereed scientific journals and conference proceedings.

Dr. Debdeep Jena is a Professor of Electrical and Computer Engineering and Materials Science and Engineering at Cornell University. He joined Cornell in 2015 from the faculty at Notre Dame where he was since August 2003, shortly after earning the Ph.D. in Electrical and Computer Engineering from the University of California, Santa Barbara (UCSB). During his research career, he has received the International MBE Young Scientist award in 2014, the IBM faculty award in 2012, the ISCS Young Scientist award in 2012, the most valuable contribution awards at the Workshop for Compound Semiconductor Materials and Devices (WOCSEMMAD) in 2014, 2010 and 2008, the National Science Foundation (NSF) Career Award in 2006, a best student paper award at the Electronic Materials Conference in 2002, and a young author best paper award from the International Union of Pure and Applied Physics (IUPAP) in 2000. His research and teaching interests are in the MBE growth and device applications of quantum semiconductor heterostructures (III-V nitride and oxide semiconductors), investigation of charge transport in nanostructured semiconducting materials such as graphene, 2D crystals, nanowires and nanocrystals, and in the theory of charge, heat, and spin transport in nanomaterials. He has authored more than 160 scientific publications including articles in Science, Nature Journals, Physical Review Letters, Electron Device Letters, and Applied Physics Letters.

Paul Maki is Program Officer for The Office of Naval Research (ONR) RF Semiconductor Devices, RF Solid State Amplifiers and Wide Bandgap Materials Program.


作者簡介(中文翻譯)

Patrick Fay 於1996年獲得伊利諾伊大學香檳分校的電機工程博士學位，並於1991年獲得聖母大學的電機工程學士學位。Fay博士於1996年和1997年擔任伊利諾伊大學香檳分校電機與計算機工程系的訪問助理教授，並於1997年加入聖母大學的教職。Fay博士的研究興趣包括微波、毫米波和太赫茲電子設備及電路的設計、製造和特性分析，以及高功率應用的設備。他的研究還包括微機械技術的開發和應用，用於製造微波至亞毫米波元件及其封裝。在聖母大學，他於1998-1999年和2018年獲得電機工程系的傑出教師獎，並於2015年獲得工程學院的傑出教師獎。Fay教授是IEEE的會士，並在經過審核的科學期刊和會議論文集中發表了9篇書章和超過300篇文章。

Dr. Debdeep Jena 是康奈爾大學電機與計算機工程及材料科學與工程的教授。他於2015年加入康奈爾大學，此前自2003年8月以來在聖母大學任教，並在加州大學聖巴巴拉分校（UCSB）獲得電機與計算機工程博士學位。在他的研究生涯中，他於2014年獲得國際MBE青年科學家獎，2012年獲得IBM教職員獎，2012年獲得ISCS青年科學家獎，並在2014年、2010年和2008年獲得化合物半導體材料與設備研討會（WOCSEMMAD）的最有價值貢獻獎，2006年獲得國家科學基金會（NSF）職業獎，2002年在電子材料會議上獲得最佳學生論文獎，以及在2000年獲得國際純粹與應用物理聯合會（IUPAP）的青年作者最佳論文獎。他的研究和教學興趣包括量子半導體異質結構（III-V氮化物和氧化物半導體）的MBE生長及其設備應用，對石墨烯、二維晶體、納米線和納米晶體等納米結構半導體材料中電荷傳輸的研究，以及納米材料中電荷、熱量和自旋傳輸的理論。他已發表超過160篇科學出版物，包括《科學》、《自然期刊》、《物理評論快報》、《電子設備快報》和《應用物理快報》的文章。

Paul Maki 是海軍研究辦公室（ONR）RF半導體設備、RF固態放大器和寬帶隙材料計劃的計劃官。

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