CMOS Memory Circuits (Hardcover) (CMOS 記憶體電路)
Tegze P. Haraszti
- 出版商: Kluwer Academic Publ
- 出版日期: 2000-09-30
- 售價: $1,100
- 貴賓價: 9.8 折 $1,078
- 語言: 英文
- 頁數: 551
- 裝訂: Hardcover
- ISBN: 0792379500
- ISBN-13: 9780792379508
-
相關分類:
CMOS
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相關主題
商品描述
CMOS Memory Circuits is a systematic
and comprehensive reference work designed to aid in the understanding of CMOS
memory circuits, architectures, and design techniques.
CMOS technology
is the dominant fabrication method and almost the exclusive choice for
semiconductor memory designers.
Both the quantity and the variety of
complementary-metal-oxide-semiconductor (CMOS) memories are staggering. CMOS
memories are traded as mass-products worldwide and are diversified to satisfy
nearly all practical requirements in operational speed, power, size, and
environmental tolerance. Without the outstanding speed, power, and packing
density characteristics of CMOS memories, neither personal computing, nor space
exploration, nor superior defense systems, nor many other feats of human
ingenuity could be accomplished. Electronic systems need continuous improvements
in speed performance, power consumption, packing density, size, weight, and
costs. These needs continue to spur the rapid advancement of CMOS memory
processing and circuit technologies.
CMOS Memory Circuits is
essential for those who intend to (1) understand, (2) apply, (3) design and (4)
develop CMOS memories.
Contents
Preface. Conventions. 1. Introduction to CMOS Memories. 2. Memory Cells. 3. Sense Amplifiers. 4. Memory Constituent Subcircuits. 5. Reliability and Yield Improvement. 6. Radiation Effects and Circuit Hardening. References. Index
商品描述(中文翻譯)
《CMOS Memory Circuits》是一本系統性且全面的參考書,旨在幫助讀者理解CMOS記憶電路、架構和設計技術。
CMOS技術是主要的製造方法,幾乎是半導體記憶體設計師唯一的選擇。CMOS記憶體的數量和種類都非常驚人。CMOS記憶體作為大量產品在全球交易,並且多樣化以滿足在操作速度、功耗、尺寸和環境容忍度方面的幾乎所有實際需求。沒有CMOS記憶體卓越的速度、功耗和封裝密度特性,個人計算、太空探索、優秀的防禦系統以及其他許多人類智慧的成就都無法實現。電子系統需要在速度性能、功耗、封裝密度、尺寸、重量和成本方面不斷改進。這些需求持續推動CMOS記憶體處理和電路技術的快速發展。
《CMOS Memory Circuits》對於那些打算(1)理解、(2)應用、(3)設計和(4)開發CMOS記憶體的人來說是必不可少的。
目錄:
前言。慣例。1. CMOS記憶體簡介。2. 記憶單元。3. 感測放大器。4. 記憶體組成子電路。5. 可靠性和良率改進。6. 輻射效應和電路硬化。參考文獻。索引。