Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

E. Kasper, D.J. Paul

  • 出版商: Springer
  • 出版日期: 2005-01-19
  • 售價: $1,600
  • 貴賓價: 9.8$1,568
  • 語言: 英文
  • 頁數: 364
  • 裝訂: Hardcover
  • ISBN: 354022050X
  • ISBN-13: 9783540220503
  • 相關分類: 量子 Quantum
  • 下單後立即進貨 (約5~7天)

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商品描述

Description

Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Table of Contents

Introduction.- Materials Science.- Resume of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistor.- Hetero-Field-Effect Transistor.- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.

商品描述(中文翻譯)

描述

量子尺寸效應在微電子學中變得越來越重要,因為結構的尺寸在橫向向100納米縮小,並在垂直向10納米縮小。先進的裝置概念將利用這些效應來實現具有新穎或改進性能的集成電路。考慮到系統芯片的趨勢,本書討論了基於矽的量子裝置,並專注於室溫操作。以跨學科的方式討論了基本的物理原理、材料、技術方面和基本的裝置操作。本書指出,矽鍺(SiGe)異質結構裝置將在實現基於矽的量子電子學中發揮關鍵作用。

目錄

引言-材料科學-半導體物理簡介-電位阻障的實現-電子裝置原理-異質結構雙極性晶體管-異質場效應晶體管-隧道現象-光電子學-集成-展望