Micro- And Nanoelectronics: Emerging Device Challenges and Solutions
暫譯: 微納電子學：新興元件挑戰與解決方案
Brozek, Tomasz, Iniewski, Krzysztof
- 出版商: CRC
- 出版日期: 2017-03-29
- 售價: $3,850
- 貴賓價: 9.5 折 $3,658
- 語言: 英文
- 頁數: 383
- 裝訂: Quality Paper - also called trade paper
- ISBN: 1138072346
- ISBN-13: 9781138072343
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商品描述
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text:
- Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling
- Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties
- Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches
- Describes the latest developments in carbon nanotubes, iii-v devices structures, and more
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
商品描述(中文翻譯)
《微電子與奈米電子學：新興裝置挑戰與解決方案》提供了微電子與奈米電子學當前技術狀態的全面概述，涵蓋了從基礎科學和材料特性到製造奈米裝置的新方法。這本前沿的著作包含了來自業界和學術界專家的貢獻：
- 討論了針對CMOS技術的新興矽裝置、完全耗盡裝置架構、特性及其縮放
- 解釋了矽化合物裝置（SiGe、SiC）的具體特性及其獨特性
- 探索了後CMOS奈米電子學的各種選擇，例如自旋電子裝置和奈米離子開關
- 描述了碳納米管、III-V族裝置結構等最新發展
《微電子與奈米電子學：新興裝置挑戰與解決方案》出色地代表了一個複雜的工程領域，檢視了新興材料和裝置架構的替代方案，這些方案有潛力塑造奈米技術的未來。
作者簡介
Tomasz Brozek is a technical fellow at PDF Solutions, San Jose, California, USA, where he is responsible for advanced silicon technology characterization, diagnostic methods development, and early yield ramp of integrated circuits. He holds an MS EE and a Ph.D in physics. His doctorate research at the Institute of Semiconductor Physics in Kiev, Ukraine focused on radiation effects and degradation in microelectronic MOS systems. Previously he taught and conducted research at Warsaw University of Technology, Poland and the University of California, Los Angeles, USA, and worked at Motorola R&D organizations in Texas and Arizona, USA.
作者簡介(中文翻譯)
Tomasz Brozek 是位於美國加州聖荷西的 PDF Solutions 的技術研究員，負責先進矽技術的特性分析、診斷方法的開發以及集成電路的早期產量提升。他擁有電機工程碩士學位和物理學博士學位。他在烏克蘭基輔的半導體物理研究所進行的博士研究專注於微電子 MOS 系統中的輻射效應和退化。之前，他曾在波蘭華沙科技大學和美國加州大學洛杉磯分校教授並進行研究，並在美國德克薩斯州和亞利桑那州的摩托羅拉研發機構工作。
