Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies (Hardcover)

Pouya Valizadeh

  • 出版商: Wiley
  • 出版日期: 2016-02-23
  • 售價: $1,780
  • 貴賓價: 9.8$1,744
  • 語言: 英文
  • 頁數: 480
  • 裝訂: Hardcover
  • ISBN: 1119155495
  • ISBN-13: 9781119155492
  • 下單後立即進貨 (約5~7天)

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商品描述

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices.

This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales.

  • Links the discussion of contemporary transistor devices to physical processes
  • Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author
  • Contains examples and end-of-chapter problems

Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs.

Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

商品描述(中文翻譯)

本書討論現代金屬氧化物半導體場效應電晶體(MOSFET)及未來的電晶體設備趨勢。

本書提供場效應電晶體(FET)的概述,通過討論FET的基本原理並探索該領域的最新技術發展。它涵蓋並連結與半導體設備物理、電晶體物理及先進電晶體概念相關的廣泛主題。本書包含六個章節。第一章討論電子材料和電荷。第二章檢視接面,討論熱平衡下的接觸、金屬-半導體接觸及金屬-絕緣體-半導體系統。第三章涵蓋傳統平面金屬氧化物半導體場效應電晶體(MOSFET)。第四章描述驅動縮放的技術變化及MOSFET的新穎尺寸。第五章分析異質接面場效應電晶體(FET),並討論異質外延的挑戰與回報。最後,第六章檢視分子尺度的FET。

- 將當代電晶體設備的討論與物理過程聯繫起來
- 本材料已在作者教授的本科及研究生課程中進行過班級測試,課程內容涉及集成電路元件的設計
- 包含範例及章末問題

《場效應電晶體:從基本概念到新技術的全面概述》是高年級本科生/研究生及專業工程師了解現代FET操作物理的參考書。

Pouya Valizadeh是加拿大魁北克省康考迪亞大學電機與計算機工程系的副教授。他於1997年、1999年和2005年分別在德黑蘭大學獲得榮譽的學士和碩士學位,並在密西根大學(安娜堡)獲得博士學位。在過去十年中,Valizadeh博士教授了五門不同課程的多個部分,涵蓋半導體製程技術、半導體材料及其特性、先進固態設備、現代CMOS技術的電晶體設計及高速電晶體等主題。