Microwave Circuit Design Using Linear and Nonlinear Techniques
Vendelin, George D., Pavio, Anthony M., Rohde, Ulrich L.
- 出版商: Wiley
- 出版日期: 2021-04-27
- 售價: $6,810
- 貴賓價: 9.5 折 $6,470
- 語言: 英文
- 頁數: 1200
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 1118449754
- ISBN-13: 9781118449752
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相關分類:
微波工程 Microwave
海外代購書籍(需單獨結帳)
相關主題
商品描述
Four leaders in the field of microwave circuit design share their newest insights into the latest aspects of the technology
The third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques delivers an insightful and complete analysis of microwave circuit design, from their intrinsic and circuit properties to circuit design techniques for maximizing performance in communication and radar systems. This new edition retains what remains relevant from previous editions of this celebrated book and adds brand-new content on CMOS technology, GaN, SiC, frequency range, and feedback power amplifiers in the millimeter range region. The third edition contains over 200 pages of new material.
The distinguished engineers, academics, and authors emphasize the commercial applications in telecommunications and cover all aspects of transistor technology. Software tools for design and microwave circuits are included as an accompaniment to the book. In addition to information about small and large-signal amplifier design and power amplifier design, readers will benefit from the book's treatment of a wide variety of topics, like:
- An in-depth discussion of the foundations of RF and microwave systems, including Maxwell's equations, applications of the technology, analog and digital requirements, and elementary definitions
- A treatment of lumped and distributed elements, including a discussion of the parasitic effects on lumped elements
- Descriptions of active devices, including diodes, microwave transistors, heterojunction bipolar transistors, and microwave FET
- Two-port networks, including S-Parameters from SPICE analysis and the derivation of transducer power gain
Perfect for microwave integrated circuit designers, the third edition of Microwave Circuit Design Using Linear and Nonlinear Techniques also has a place on the bookshelves of electrical engineering researchers and graduate students. It's comprehensive take on all aspects of transistors by world-renowned experts in the field places this book at the vanguard of microwave circuit design research.
作者簡介
George D. Vendelin is a technical consultant with over 40 years of microwave engineering design and teaching experience. HIs clients include Texas Instruments, Anritsu, Ford Aerospace/Loral Space & Communications/Lockheed Martin, and Litton/Filtronics. He is an adjunct professor at Stanford University, Santa Clara University, San Jose State University, and UC-Berkeley-Extension. Prof. Vendelin is a Fellow of the IEEE.
Anthony M. Pavio, Ph.D., is an independent consultant, specializing in the design of RF and microwave components for military and commercial electronics. During the last eight years, his consulting projects for General Dynamics encompassed the development of several broadband hand-held transceivers and power amplifiers for X-band phased array RADAR. He was previously the manager of the Integrated RF Ceramics Center for Motorola Labs, which focused on the development of highly integrated active LTCC modules for communications. Dr. Pavio was also a technical director of the microwave products division of Texas Instruments and is a Fellow of the IEEE.
Ulrich L. Rohde is Chairman of Synergy Microwave Corporation; a partner of Rohde & Schwarz, a firm specializing in test equipment and advanced communications systems; and Professor of Microwave and RF Technology at the Technische Universitat Cottbus, Germany and other Universities. Prof. Rohde specializes in Low Noise Oscillators, High Performance Mixers and Synthesizers and has published more than 200 papers and eight books. Prof. Rohde is a Fellow of the IEEE.
Matthias Rudolph, PhD, is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Previously he worked at the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH), Berlin, where he was responsible for the modeling of GaN HEMTs and GaAs HBTs and for heading the low noise components group. Prof. Rudolph is a Senior member of the IEEE.
