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商品描述
Provides an overview of a complete collection of semiconductor devices.
*
Presents self-contained data on over 180 device variations.
* Suitable for a
wide variety of audiences--from students to practitioners to laypeople.
Table of Contents
Preface.
Preface to the First Edition.
Introduction.
DIODES I: RECTIFIERS.
p-n Junction Diode.
p-i-n Diode.
Schottky-Barrier Diode.
Planar-Doped-Barrier (PDB) Diode.
Isotype Heterojunction.
DIODES II: NEGATIVE RESISTANCE N-SHAPED.
Tunnel Diode.
Transferred-Electron Device (TED).
Resonant-Tunneling Diode.
Resonant-Interband-Tunneling (RIT) Diode.
Single-Barrier Tunnel Diode.
Single-Barrier Tunnel Diode.
Single-Barrier Interband-Tunneling Diode.
Real-Space-Transfer (RST) Diode.
DIODES III: NEGATIVE RESISTANCE S-SHAPED.
Metal-Insulator-Semiconductor Switch (MISS).
Planar-Doped-Barrier (PDB) Switch.
Amorphous Threshold Switch.
Heterostructure Hot-Electron Diode (HHED).
DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME.
Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode.
Barrier-Injection Transit-Time (BARITT) Diode.
RESISTIVE AND CAPACITIVE DEVICES.
Resistor.
Metal-Oxide-Semiconductor (MOS) Capacitor.
Charge-Coupled Device (CCD).
TRANSISTORS I: FIELD-EFFECT.
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).
Junction Field-Effect Transistor (JFET).
Metal-Semiconductor Field-Effect Transistor (MESFET).
Modulation-Doped Field-Effect Transistor (MODFET).
Permeable-Base Transistor.
Static-Induction Transistor (SIT).
Real-Space-Transfer (RST) Transistor.
Planar-Doped Field-Effect Transistor.
Surface-Tunnel Transistor.
Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET).
Stark-Effect Transistor.
Velocity-Modulation Transistor (VMT).
TRANSISTOR II: POTENTIAL-EFFECT.
Bipolar Transistor.
Tunneling Hot-Electron-Transfer Amplifier (THETA).
Metal-Base Transistor.
Bipolar Inversion-Channel Field-Effect Transistor (BICFET).
Tunnel-Emitter Transistor (TETRAN).
Planar-Doped-Barrier (PDB) Transistor.
Heterojunction Hot-Electron Transistor (HHET).
Induced-Base Transistor.
Resonant-Tunneling Bipolar Transistor (RTBT/RBT).
Resonant-Tunneling Hot-Electron Transistor (RHET).
Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT).
Spin-Valve Transistor.
NONVOLATILE MEMORIES.
Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS) Transistor.
Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor.
THYRISTORS AND POWER DEVICES.
Silicon-Controlled Rectifier (SCR).
Insulated-Gate Bipolar Transistor (IGBT).
Static-Induction Thyristor (SIThy).
Unijunction Transistor.
PHOTONICS I: LIGHT SOURCES.
Light-Emitting Diode (LED).
Injection Laser.
PHOTONICS II: PHOTODETECTORS.
Photoconductor.
p-i-n Photodiode.
Schottky-Barrier Photodiode.
Charge-Coupled Image Sensor (CCIS).
Avalanche Photodiode (APD).
Phototransistor.
Metal-Smiconductor-Metal (MSM) Photodetector.
Quantum-Well Infrared Photodetector (QWIP).
Quantum-Dot Infrared Photodetector (QDIP).
Blocked-Impurity-Band (BIB) Photodetector.
Negative-Electron-Affinity (NEA) Photocathode.
Photon-Drag Detector.
PHOTONICS III: BISTABLE OPTICAL DEVICES.
Self-Electrooptic-Effect Device (SEED).
Bistable Etalon.
PHOTONICS IV: OTHER DEVICES.
Solar Cell.
Electroabsorption Modulator.
Thermistor.
Hall Plate.
Strain Gauge (Gage).
Interdigital Transducer (IDT).
Ion-Sensitive Field-Effect Transistor (ISFET).
Appendix A: Selected Nonsemiconductor Devices.
Appendix B: Physical Phenomena.
Appendix C: General Applications of Device Groups.
Appendix D: Physical Properties.
Appendix E: Background Information.
Index.