Silicon Devices and Process Integration: Deep Submicron and Nano-Scale Technologies (Hardcover)
暫譯: 矽元件與製程整合:深亞微米與奈米尺度技術 (精裝版)
Badih El-Kareh
- 出版商: Springer
- 出版日期: 2009-01-12
- 售價: $1,750
- 貴賓價: 9.8 折 $1,715
- 語言: 英文
- 頁數: 598
- 裝訂: Hardcover
- ISBN: 0387367985
- ISBN-13: 9780387367989
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商品描述
Description
Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices.
Features include:
- A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon;
- State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS;
- CMOS-only applications, such as subthreshold current and parasitic latch-up;
- Advanced Enabling processes and process integration.
This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.
商品描述(中文翻譯)
描述
矽元件與製程整合 涵蓋了最先進的矽元件、其特性及其與製程參數的互動。這本書作為一本綜合指南,探討了現代矽元件的理論與實務面向,以及其電性質與製程條件之間的關係。該書是根據作者的工業與學術講義整理而成,反映了多年在矽元件開發方面的經驗。
特色包括:
- 對矽特性的回顧,為理解元件特性討論提供基礎,包括透過應變增強矽的遷移率;
- 關於高介電常數(high-K)閘極介電材料、低介電常數(low-K)介電材料、銅互連(Cu interconnects)及矽鍺(SiGe)雙極元件(BiCMOS)的最先進技術;
- 僅限CMOS的應用,例如亞閾值電流(subthreshold current)和寄生鎖定(parasitic latch-up);
- 先進的啟用製程(Enabling processes)及製程整合。
本書是為半導體研究、開發及製造領域的工程師和科學家所撰寫。每章結尾的問題以及眾多的圖表和表格,使其也適合用作電機工程和材料科學的研究生及高級本科課程的教材。