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Description
Fault-tolerance in integrated circuits is not an exclusive concern regarding space designers or highly-reliable application engineers. Rather, designers of next generation products must cope with reduced margin noises due to technological advances. The continuous evolution of the fabrication technology process of semiconductor components, in terms of transistor geometry shrinking, power supply, speed, and logic density, has significantly reduced the reliability of very deep submicron integrated circuits, in face of the various internal and external sources of noise. The very popular Field Programmable Gate Arrays, customizable by SRAM cells, are a consequence of the integrated circuit evolution with millions of memory cells to implement the logic, embedded memories, routing, and more recently with embedded microprocessors cores. These re-programmable systems-on-chip platforms must be fault-tolerant to cope with present days requirements. This book discusses fault-tolerance techniques for SRAM-based Field Programmable Gate Arrays (FPGAs). It starts by showing the model of the problem and the upset effects in the programmable architecture. In the sequence, it shows the main fault tolerance techniques used nowadays to protect integrated circuits against errors. A large set of methods for designing fault tolerance systems in SRAM-based FPGAs is described. Some presented techniques are based on developing a new fault-tolerant architecture with new robustness FPGA elements. Other techniques are based on protecting the high-level hardware description before the synthesis in the FPGA. The reader has the flexibility of choosing the most suitable fault-tolerance technique for its project and to compare a set of fault tolerant techniques for programmable logic applications.
DEDICATION. CONTRIBUTING AUTHORS. PREFACE.
1. INTRODUCTION.
2. RADIATION EFFECTS IN INTEGRATED CIRCUITS. 2.1 RADIATION ENVIROMENT OVERVIEW. 2.2 RADIATION EFFECTS IN INTEGRATED CIRCUITS. 2.2.1 SEU Classification. 2.3 PECULIAR EFFECTS IN SRAM-BASED FPGAS.
3. SINGLE EVENT UPSET (SEU) MITIGATION TECHNIQUES. 3.1 DESIGN-BASED TECHNIQUES. 3.1.1 Detection Techniques. 3.1.2 Mitigation Techniques. 3.1.2.1 Full Time and Hardware Redundancy. 3.1.2.2 Error Correction and Detection Codes. 3.1.2.3 Hardened Memory Cells. 3.2 EXAMPLES OF SEU MITIGATION TECHNIQUES IN ASICS. 3.3 EXAMPLES OF SEU MITIGATION TECHNIQUES IN FPGAS. 3.3.1 Antifuse based FPGAs. 3.3.2 SRAM-based FPGAs. 3.3.2.1 SEU Mitigation Solution in high-level description. 3.3.2.2 SEU Mitigation Solutions at the Architectural level. 3.3.2.3 Recovery technique.
4. ARCHITECTURAL SEU MITIGATION TECHNIQUES.
5. HIGH-LEVEL SEU MITIGATION TECHNIQUES. 5.1 TRIPLE MODULAR REDUNDANCY TECHNIQUE FOR FPGAS. 5.2 SCRUBBING.
6. TRIPLE MODULAR REDUNDANCY (TMR) ROBUSTNESS. 6.1 TEST DESIGN METHODOLOGY. 6.2 FAULT INJECTION IN THE FPGA BITSTREAM. 6.3 LOCATING THE UPSET IN THE DESIGN FLOORPLANNING. 6.3.1 Bit column location in the matrix. 6.3.2 Bit row location in the matrix. 6.3.3 Bit location in the CLB. 6.3.4 Bit Classification. 6.4 FAULT INJECTION RESULTS. 6.5 THE "GOLDEN" CHIP APPROACH.
7. DESIGNING AND TESTING A TMR MICRO-CONTROLLER. 7.1 AREA AND PERFORMANCE RESULTS. 7.2 TMR 8051 MICRO-CONTROLLER RADIATION GROUND TEST RESULTS.
8. REDUCING TMR OVERHEADS: PART I. 8.1 DUPLICATION WITH COMPARISON COMBINED WITH TIME REDUNDANCY. 8.2 FAULT INJECTION IN THE VHDL DESCRIPTION. 8.3 AREA AND PERFORMANCE RESULTS.
9. REDUCING TMR OVERHEADS: PART II. 9.1 DWC-CED TECHNIQUE IN ARITHMETIC-BASED CIRCUITS. 9.1.1 Using CED based on hardware redundancy. 9.1.2 Using CED based on time redundancy. 9.1.3 Choosing the most appropriated CED block. 9.1.3.1 Multipliers. 9.1.3.2 Arithmetic and Logic Unit (ALU). 9.1.3.3 Digital FIR Filter. 9.1.4 Fault Coverage Results. 9.1.4 Area and Performance Results. 9.2 DESIGNING DWC-CED TECHNIQUE IN NON-ARITHMETIC-BASED CIRCUITS.
10. FINAL REMARKS.
REFERENCES.
商品描述(中文翻譯)
描述
集成電路的容錯性並非僅僅是太空設計師或高可靠性應用工程師的專屬關注。相反,下一代產品的設計師必須應對由於技術進步而導致的邊際噪聲減少。半導體元件製造技術的持續演進,無論是在晶體管幾何縮小、電源、速度還是邏輯密度方面,都顯著降低了非常深亞微米集成電路的可靠性,面對各種內部和外部噪聲源。非常受歡迎的可編程邏輯閘陣列(Field Programmable Gate Arrays,FPGA),由SRAM單元自定義,是集成電路演進的結果,擁有數百萬個記憶體單元來實現邏輯、嵌入式記憶體、路由,最近還包括嵌入式微處理器核心。這些可重新編程的系統單晶片平台必須具備容錯能力,以應對當前的需求。本書討論了基於SRAM的FPGA的容錯技術。它首先展示了問題模型及其在可編程架構中的影響。接著,介紹了當前用於保護集成電路免受錯誤影響的主要容錯技術。描述了一大套設計基於SRAM的FPGA容錯系統的方法。一些提出的技術基於開發具有新穩健性FPGA元件的新容錯架構。其他技術則基於在FPGA合成之前保護高級硬體描述。讀者可以靈活選擇最適合其項目的容錯技術,並比較一組適用於可編程邏輯應用的容錯技術。
目錄
獻辭。貢獻作者。前言。
1. 引言。
2. 集成電路中的輻射效應。2.1 輻射環境概述。2.2 集成電路中的輻射效應。2.2.1 單事件擾動(SEU)分類。2.3 基於SRAM的FPGA中的特殊效應。
3. 單事件擾動(SEU)緩解技術。3.1 基於設計的技術。3.1.1 偵測技術。3.1.2 緩解技術。3.1.2.1 完全時間和硬體冗餘。3.1.2.2 錯誤更正和偵測碼。3.1.2.3 加固記憶體單元。3.2 ASIC中的SEU緩解技術示例。3.3 FPGA中的SEU緩解技術示例。3.3.1 基於抗熔絲的FPGA。3.3.2 基於SRAM的FPGA。3.3.2.1 高級描述中的SEU緩解解決方案。3.3.2.2 架構層級的SEU緩解解決方案。3.3.2.3 恢復技術。
4. 架構SEU緩解技術。
5. 高級SEU緩解技術。5.1 FPGA的三模冗餘技術。5.2 清除技術。
6. 三模冗餘(TMR)穩健性。6.1 測試設計方法論。6.2 FPGA位流中的故障注入。6.3 在設計平面規劃中定位擾動。6.3.1 矩陣中的位元列位置。6.3.2 矩陣中的位元行位置。6.3.3 CLB中的位元位置。6.3.4 位元分類。