Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition
暫譯: 半導體異質外延：理論、成長與特徵化（第二版）
Ayers, John E., Kujofsa, Tedi, Rago, Paul
相關主題
商品描述
In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
商品描述(中文翻譯)
在過去十年中，隨著電子產業的爆炸性增長以及各種異質外延裝置在固態照明、綠色能源、顯示器、通訊和數位計算等領域的發展，異質外延的重要性持續增加。我們對異質外延基本物理和化學的理解不斷加深，特別是晶格鬆弛和位錯動力學，使得對變形裝置的重視日益增加。為了反映這一重點，本新版本中新增了兩個全新章節。一個章節探討變形緩衝層，另一個則涵蓋變形裝置。其餘七個章節經過廣泛修訂，新增了有關晶體對稱性和關係、III-氮化物材料、晶格鬆弛物理和模型、原位表徵以及倒易空間圖的內容。
作者簡介
J.E. Ayers, T. Kujofsa, P.B. Rago, and J.E. Raphael are all members of the Semiconductor Materials Research Group at the University of Connecticut, Storrs, USA.
作者簡介(中文翻譯)
J.E. Ayers、T. Kujofsa、P.B. Rago 和 J.E. Raphael 都是美國康乃狄克大學斯托斯的半導體材料研究小組成員。
